PDC2306Z Datasheet | Potens semiconductor

Preliminary datasheet 20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. PPAK3x3 Pin Configuration DD D D SS SG BVDSS 20V RDSON 5.4m ID 65A Features - 20V,65A, RDS(ON) =5.4mΩ @VGS = 4.5V - Improved dv/dt capability - Green Device Available - Suit for 1.8V Gate Drive Applications Applications - Load Switch - POL Applications - SMPS 2nd SR - Li-Battery...