PDD30N15 mosfets equivalent, n-channel mosfets.
* 150V,25A, RDS(ON) 65mΩ@VGS = 10V
* VGS Guarantee ± 25V
* Improved dv/dt capability
* Fast switching
* Green Device Available
Applications
* Not.
TO252 Pin Configuration
D
SG G
D S
BVDSS 150V
RDSON 65m
ID 25A
Features
* 150V,25A, RDS(ON) 65mΩ@VGS = 10V <.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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