PDD3808Z Datasheet - Potens semiconductor

N-Channel MOSFETs

PDD3808Z Features

* 30V,42A, RDS(ON) =9mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter D

PDD3808Z General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDD3808Z Datasheet (626.82 KB)

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Datasheet Details

Part number:

PDD3808Z

Manufacturer:

Potens semiconductor

File Size:

626.82 KB

Description:

N-channel mosfets.

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PDD3808Z N-Channel MOSFETs Potens semiconductor

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PDD3808Z Features

PDD3808Z General Description

Datasheet Details

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