PDD3808Z Datasheet, Potens semiconductor

* 30V,42A, RDS(ON) =9mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* MB / VGA / Vcore
* POL App.

TO252-4L Dual Pin Configuration D1 D2 D1 S1G1S2G2 G1 G2 S1 D2 S2 BVDSS 30V RDSON 9m ID 42A Features
* 30V.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.