PDD6701 Datasheet, Potens semiconductor

* Fast switching
* Green Device Available
* Suit for 4.5V Gate Drive Applications Applications
* DC Fan
* Motor Drive Applications
* Networking <.

TO252-4L Pin Configuration D1 D2 D1/D2 S1G1S2G2 G1 G2 S1 S2 BVDSS 60V -60V RDSON 30m 48m ID 19A -17A Featur.

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high.