PDD6701 Datasheet - Potens semiconductor

N+P Dual Channel MOSFETs

PDD6701 Features

* Fast switching

* Green Device Available

* Suit for 4.5V Gate Drive Applications Applications

* DC Fan

* Motor Drive Applications

* Networking

* Half / Full Bridge Topology Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ

PDD6701 General Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mod.

PDD6701 Datasheet (860.62 KB)

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Datasheet Details

Part number:

PDD6701

Manufacturer:

Potens semiconductor

File Size:

860.62 KB

Description:

N+p dual channel mosfets.

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PDD6701 N +P Dual Channel MOSFETs Potens semiconductor

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PDD6701 Features

PDD6701 General Description

Datasheet Details

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