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PDEU2320Y Datasheet - Potens semiconductor

PDEU2320Y N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDEU2320Y Features

* 20V,800mA, RDS(ON) =300mΩ@VGS = 4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for 1.5V Gate Drive Applications Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-held Instruments Absolute Maximum Ratings Tc=25℃

PDEU2320Y-Potenssemiconductor.pdf