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PDEU2320Z - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V,800mA, RDS(ON) =300mΩ@VGS = 4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for 1.5V Gate Drive.

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Datasheet Details

Part number PDEU2320Z
Manufacturer Potens semiconductor
File Size 670.92 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDEU2320Z Datasheet
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20V N-Channel MOSFETs PDEU2320Z General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT323 Pin Configuration D D S G G S BVDSS 20V RDSON 300m ID 800mA Features  20V,800mA, RDS(ON) =300mΩ@VGS = 4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.
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