PDEU2320Y - N-Channel MOSFETs

Potens semiconductor

Datasheet Details

Part number	PDEU2320Y
Manufacturer	Potens semiconductor
File Size	667.33 KB
Description	N-Channel MOSFETs
Datasheet	PDEU2320Y Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

20V N-Channel MOSFETs PDEU2320Y General.

Key Features

20V,800mA, RDS(ON) =300mΩ@VGS = 4.5V.
Improved dv/dt capability.
Fast switching.
Green Device Available.
Suit for 1.5V Gate Drive.

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