Datasheet4U Logo Datasheet4U.com

PDEU2320Y - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V,800mA, RDS(ON) =300mΩ@VGS = 4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for 1.5V Gate Drive.

📥 Download Datasheet

Datasheet preview – PDEU2320Y

Datasheet Details

Part number PDEU2320Y
Manufacturer Potens semiconductor
File Size 667.33 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDEU2320Y Datasheet
Additional preview pages of the PDEU2320Y datasheet.

📁 Similar Datasheet

Other Datasheets by Potens semiconductor

Full PDF Text Transcription

Click to expand full text
20V N-Channel MOSFETs PDEU2320Y General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT523 Pin Configuration D D S G G S BVDSS 20V RDSON 300m ID 800mA Features  20V,800mA, RDS(ON) =300mΩ@VGS = 4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for 1.
Published: |