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PDEU2320W - N-Channel MOSFETs

Datasheet Details

Part number PDEU2320W
Manufacturer Potens semiconductor
File Size 418.08 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDEU2320W Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

20V N-Channel MOSFETs General.

Key Features

  • 20V,500mA, RDS(ON) =350mΩ@VGS = 4.5V.
  • Worldwide Smallest Package : 1x0.6x0.45 mm.
  • Fast switching.
  • Green Device Available.
  • Suit for 1.2V Gate Drive.