Datasheet4U Logo Datasheet4U.com

PDEU2320W - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V,500mA, RDS(ON) =350mΩ@VGS = 4.5V.
  • Worldwide Smallest Package : 1x0.6x0.45 mm.
  • Fast switching.
  • Green Device Available.
  • Suit for 1.2V Gate Drive.

📥 Download Datasheet

Datasheet preview – PDEU2320W

Datasheet Details

Part number PDEU2320W
Manufacturer Potens semiconductor
File Size 418.08 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDEU2320W Datasheet
Additional preview pages of the PDEU2320W datasheet.

📁 Similar Datasheet

Other Datasheets by Potens semiconductor

Full PDF Text Transcription

Click to expand full text
20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT883 Pin Configuration D S G D S G S PDEU2320W BVDSS 20V RDSON 350m ID 500mA Features  20V,500mA, RDS(ON) =350mΩ@VGS = 4.5V  Worldwide Smallest Package : 1x0.6x0.45 mm  Fast switching  Green Device Available  Suit for 1.
Published: |