PDEU2320W
Overview
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- 20V,500mA, RDS(ON) =350mΩ@VGS = 4.5V
- Worldwide Smallest Package : 1x0.6x0.45 mm
- Fast switching
- Green Device Available
- Suit for 1.2V Gate Drive Applications
- 2KV HBM ESD Capability
