PDF0904 Datasheet - Potens semiconductor

N-Channel MOSFETs

PDF0904 Features

* 100V,16.5A, RDS(ON) =48mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* Networking

* Load Switch

* LED applications Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM

PDF0904 General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDF0904 Datasheet (725.13 KB)

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PDF0904

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Potens semiconductor

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725.13 KB

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N-channel mosfets.

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PDF0904 N-Channel MOSFETs Potens semiconductor

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