PDH8966A mosfets equivalent, n-channel mosfets.
* 80V,70A, RDS(ON) =12mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available
Applications
* Netw.
TO263 Pin Configuration D
D
G S
G S
BVDSS 80V
RDSON 12m
ID 70A
Features
* 80V,70A, RDS(ON) =12mΩ@VGS = 10V.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
Image gallery
Download