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PDH8974 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 80V,120A, RDS(ON) =3.9mΩ@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet Details

Part number PDH8974
Manufacturer Potens semiconductor
File Size 687.13 KB
Description N-Channel MOSFETs
Datasheet download datasheet PDH8974 Datasheet

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Full PDF Text Transcription

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80V N-Channel MOSFETs PDH8974 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TO263 Pin Configuration D D G S G S BVDSS 80V RDSON 3.9m ID 120A Features  80V,120A, RDS(ON) =3.
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