PDP6910 Datasheet, Potens semiconductor

* 60V,24A, RDS(ON) =52mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* Moto.

TO220 Pin Configuration D G BVDSS 60V RDSON 52m ID 24A Features
* 60V,24A, RDS(ON) =52mΩ@VGS = 10V
* Im.

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.