Datasheet4U Logo Datasheet4U.com

PJD04N60D Datasheet N-Channel MOSFETS

Manufacturer: Potens semiconductor

📥 Download Datasheet

Datasheet Details

Part number PJD04N60D
Manufacturer Potens semiconductor
File Size 713.76 KB
Description N-Channel MOSFETS
Datasheet download datasheet PJD04N60D Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supply TO252 Pin Configuration D D S G G S BVDSS RDSON ID 600V 1.2 4A

Overview

600V N-Channel MOSFETS PJD04N60D General.

Key Features

  • 4A,600V, RDS(ON) =1.2Ω@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

More Datasheets from Potens semiconductor

Part Number Description
PJD04N70L N-Channel MOSFETS
PJD11N60D N-Channel MOSFETS
PJD11N65D N-Channel MOSFETS