PJD11N60D - N-Channel MOSFETS

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

11A,600V, RDS(ON) =0.38Ω@VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PJD11N60D n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PJD11N60D
Manufacturer	Potens semiconductor
File Size	715.76 KB
Description	N-Channel MOSFETS
Datasheet	PJD11N60D Datasheet

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600V N-Channel MOSFETS PJD11N60D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO252 Pin Configuration D S G G D S BVDSS 600V RDSON 0.38 ID 11A Features  11A,600V, RDS(ON) =0.