Datasheet Details
| Part number | PJD11N60D |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 715.76 KB |
| Description | N-Channel MOSFETS |
| Datasheet | PJD11N60D-Potenssemiconductor.pdf |
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Overview: 600V N-Channel MOSFETS PJD11N60D General.
| Part number | PJD11N60D |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 715.76 KB |
| Description | N-Channel MOSFETS |
| Datasheet | PJD11N60D-Potenssemiconductor.pdf |
|
|
|
These N-Channel enhancement mode power field effect transistors are using Super Junction technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency switch mode power supply TO252 Pin Configuration D S G G D S BVDSS 600V RDSON 0.38 ID 11A
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