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PJD11N65D - N-Channel MOSFETS

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 11A,650V, RDS(ON) =0.38Ω@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

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Datasheet preview – PJD11N65D

Datasheet Details

Part number PJD11N65D
Manufacturer Potens semiconductor
File Size 723.94 KB
Description N-Channel MOSFETS
Datasheet download datasheet PJD11N65D Datasheet
Additional preview pages of the PJD11N65D datasheet.

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Full PDF Text Transcription

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650V N-Channel MOSFETS PJD11N65D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO220F Pin Configuration D S G G D S BVDSS 650V RDSON 0.38 ID 11A Features  11A,650V, RDS(ON) =0.
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