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PJF21N50T Datasheet N-Channel MOSFETS

Manufacturer: Potens semiconductor

Datasheet Details

Part number PJF21N50T
Manufacturer Potens semiconductor
File Size 770.82 KB
Description N-Channel MOSFETS
Download PJF21N50T Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supply TO220F Pin Configuration D S GD G S BVDSS 500V RDSON 0.22 ID 21A

Overview

Preliminary datasheet 500V N-Channel MOSFETS PJF21N50T General.

Key Features

  • 21A,500V, RDS(ON) =0.22Ω@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.