Datasheet Details
| Part number | PMF09N50M |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 560.36 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
 PMF09N50M Datasheet
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| Part number | PMF09N50M |
|---|---|
| Manufacturer | Potens semiconductor |
| File Size | 560.36 KB |
| Description | N-Channel MOSFETs |
| Datasheet |
PMF09N50M Datasheet
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These N-Channel enhancement mode power field effect transistors are using advanced super junction technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply BVDSS 500V RDSON 0.8
500V N-Channel MOSFETs PMF09N50M General.
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