Datasheet4U Logo Datasheet4U.com

PFW20N50 - 500V N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ 100% EAS Test ‰ Rugged Gate Oxide Technology ‰ Extremely Low Intrinsic Capacitances ‰ Remarkable Switching Characteristics ‰ Unequalled Gate Charge : 90 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.20 Ω (Typ. ) @VGS=10V.

📥 Download Datasheet

Datasheet Details

Part number PFW20N50
Manufacturer Power Device
File Size 862.18 KB
Description 500V N-Channel MOSFET
Datasheet download datasheet PFW20N50 Datasheet

📁 Similar Datasheet

  • PFW20N50 - N-Channel MOSFET (Wing On)
  • PFW20N50E - N-Channel MOSFET (Wing On)
  • PFW20N60 - N-Channel MOSFET (Wing On)
  • PFW2500 - WASHER LEAD PRESS-FIT DIODE (WON-TOP)
  • PFW2501 - WASHER LEAD PRESS-FIT DIODE (WON-TOP)
  • PFW2502 - WASHER LEAD PRESS-FIT DIODE (WON-TOP)
  • PFW2503 - WASHER LEAD PRESS-FIT DIODE (WON-TOP)
  • PFW2504 - WASHER LEAD PRESS-FIT DIODE (WON-TOP)
  • PFW2505 - WASHER LEAD PRESS-FIT DIODE (WON-TOP)
  • PFW2506 - WASHER LEAD PRESS-FIT DIODE (WON-TOP)
Other Datasheets by Power Device

    Full PDF Text Transcription

    Click to expand full text
    Aug 2006 PFW20N50 FEATURES ‰ Originative New Design ‰ 100% EAS Test ‰ Rugged Gate Oxide Technology ‰ Extremely Low Intrinsic Capacitances ‰ Remarkable Switching Characteristics ‰ Unequalled Gate Charge : 90 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.20 Ω (Typ.) @VGS=10V APPLICATION ‰ High current, High speed switching ‰ Suitable for power supplies, adaptors and PFC ‰ SMPS (Switched Mode Power Supplies) PFW20N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) = 0.25 Ω ID = 20 A TO-247 Drain { Gate { ● ◀▲ ● ● Source { TO-3P 1 2 3 1.Gate 2. Drain 3. Source 1 2 3 1.Gate 2. Drain 3.
    Published: |