Datasheet4U Logo Datasheet4U.com

F1010EL Datasheet Power MOSFET

Manufacturer: Power MOSFET

Overview: PD - 91720 IRF1010ES IRF1010EL l l l l .. l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated G HEXFET® Power.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of acmodating die sizes up to HEX-4.

Key Features

  • rrent Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD ].
  • VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www. irf. com 7 IRF1010ES/IRF1010EL D2Pak Package Outline www. DataSheet4U. com 1.4 0 (.055 ) M AX. 1 0.54 (.4 15) 1 0.29 (.4 05) -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
VBsemi Logo F1010EZ N-Channel 60V MOSFET VBsemi
VBsemi Logo F1010EZS N-Channel 60V MOSFET VBsemi
International Rectifier Logo F1010N Power MOSFET International Rectifier

More Datasheets from Power MOSFET

Part Number Description
F1010ES Power MOSFET

F1010EL Distributor