F1010N
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
- Part: F1010N
- Description: Power MOSFET
- Category: MOSFET
- Manufacturer: International Rectifier
- Size: 237.32 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| F1010ES | Power MOSFET | Power MOSFET |
| F1010EL | Power MOSFET | Power MOSFET |
| F1010EZ | VBsemi | N-Channel 60V MOSFET |
| F1010EZS | VBsemi | N-Channel 60V MOSFET |
| F1018 | Polyfet RF Devices | RF POWER VDMOS TRANSISTOR |
| F1012 | Polyfet RF Devices | RF POWER VDMOS TRANSISTOR |
| LSHD-F101 | LITEON | digit height single-digit display |
| F1014 | Polyfet RF Devices | RF POWER VDMOS TRANSISTOR |
| F1015 | Polyfet RF Devices | RF POWER VDMOS TRANSISTOR |
| F1016 | Polyfet RF Devices | RF POWER VDMOS TRANSISTOR |