IRFP054N mosfet equivalent, power mosfet.
IRFP054N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
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Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane
* Low Leakage Inductance .
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .
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