power mosfet.
U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate .
Description
l
D
VDSS = 60V RDS(on) = 9.0mΩ
G S
ID = 93A
Advanced HEXFET® Power MOSFETs from International Rectifie.
l
D
VDSS = 60V RDS(on) = 9.0mΩ
G S
ID = 93A
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi.
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