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Powerex Power Semiconductors

CM1200HA-24J Datasheet Preview

CM1200HA-24J Datasheet

IGBT Module

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM1200HA-24J
Single IGBTMOD™
H-Series Module
1200 Amperes/1200 Volts
A
B
U - M4 THD
R (2 TYP.)
K
P
M
C
E
G
E
C
B
S - M8 THD
(2 TYP.)
A
JG
Q
T - DIA.
(4 TYP.)
L
H
F
N
D
E
EC
G
E
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A 5.12 130.0
B 4.33±0.01 110.0±0.25
C
1.840
46.75
D 1.73±0.04/0.02 44.0±1.0/0.5
E 1.46±0.04/0.02 37.0±1.0/0.5
F 1.42 36.0
G 1.25 31.8
H 1.18 30.0
J 1.10 28.0
K 1.08 27.5
Dimensions
L
M
N
P
Q
R
S
T
U
Inches
0.79
0.77
0.75
0.61
0.51
0.35
M8 Metric
0.26 Dia.
M4 Metric
Millimeters
20.0
19.5
19.0
15.6
13.0
9.0
M8
Dia. 6.5
M4
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1200HA-24J is a 1200V
(VCES), 1200 Ampere Single
IGBTMOD™ Power Module.
Type Current Rating
VCES
Amperes
Volts (x 50)
CM 1200
24
1




Powerex Power Semiconductors

CM1200HA-24J Datasheet Preview

CM1200HA-24J Datasheet

IGBT Module

No Preview Available !

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM1200HA-24J
Single IGBTMOD™ H-Series Module
1200 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj 150°C)
Emitter Current** (Tc = 25°C)
Peak Emitter Current** (Tj 150°C)
Maximum Collector Dissipation (Tc = 25°C) (Tj < 150°C)
Max. Mounting Torque M8 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Mounting Torque G(E) Terminal M4
Module Weight (Typical)
Isolation Voltage, Main Terminal to Base Plate, AC 1 Min.
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
Viso
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter Current Voltage**
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC
VCE = VCES, VGE = 0V
VGE = VCES, VCE = 0V
IC = 120mA, VCE = 10V
IC = 1200A, VGE = 15V, Tj = 25°C
IC = 1200A, VGE = 15V, Tj = 125°C
VCC = 600V, IC = 1200A, VGE = 15V
IE = 1200A, VGE = 0V
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Cies
Coes
Cres
td(on)
VGE = 0V, VCE = 10V
VCC = 600V, IC = 1200A,
Load
Switching
Rise Time
Turn-off Delay Time
tr
td(off)
VGE1 = VGE2 = 15V,
RG = 3.3, Resistive
Time
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
tf Load Switching Operation
trr IE = 1200A, diE/dt = –2400A/µs
Qrr IE = 1200A, diE/dt = –2400A/µs
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case**
Rth(j-c)Q
Per IGBT
Thermal Resistance, Junction to Case**
Rth(j-c)R
Per FWDi
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
CM1200HA-24J
–40 to +150
–40 to +125
1200
±20
1200
2400*
1200
2400*
5800
95
40
15
1600
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Grams
Volts
Min. Typ. Max. Units
– – 6 mA
– – 0.5 µA
4.5 6.0 7.5 Volts
– 2.4 3.1 Volts
– 2.5 – Volts
– 5000 –
nC
– – 3.7 Volts
Min. Typ. Max. Units
– – 200 nF
––
70 nF
––
40 nF
– – 600 ns
1800
ns
1200
ns
1500
ns
– – 300 ns
– 9.0 – µC
Min. Typ. Max. Units
– – 0.022 °C/W
– – 0.050 °C/W
– – 0.018 °C/W


Part Number CM1200HA-24J
Description IGBT Module
Maker Powerex Power Semiconductors
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