PSTG25HDT12 - Powerline N-Channel Trench Gate-IGBT

Features

Package with DCB ceramic base plate and soldering pins for PCB mounting.
Isolation voltage over 3000 V∼.
Trench Gate.
Enhancement Mode N-Channel Device.
Non Punch through Structure.
High Switching Speed.
Low On-state Saturation Voltage.
High Input Impedance Simplifies Gate Drive.
Latch-Free Operation.
Fully Short Circuit Rated to 10 µs.
Wide RBSOA.

PSTG25HDT12 Powerline N-Channel Trench Gate-IGBT by Powersem GmbH - Datasheet Preview — Datasheet preview – PSTG25HDT12

Datasheet Details

Part number	PSTG25HDT12
Manufacturer	Powersem GmbH
File Size	148.20 KB
Description	Powerline N-Channel Trench Gate-IGBT
Datasheet	PSTG25HDT12 Datasheet
Additional preview pages of the PSTG25HDT12 datasheet.

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Other Datasheets by Powersem GmbH

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Full PDF Text Transcription

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ECO-PACTM 1 Powerline N-Channel Trench GateIGBT Module PSTG 25HDT12 VCES VCE(sat) IC25 IC75 ICM tSC G N TC Preliminary Data Sheet = 1200 V = 1.9 V = 35 A = 25 A = 75 A = 10 µs H M L N BA C Symbol VCES VGES IC25 IC75 ICM Ptot tSC TVJ Tstg RthJC RthJC VISOL MD dS dA Weight Test Conditions TVJ = 25°C to 150°C continous TC = 25°C; TC = 75°C; TC = 75°C; TC = 75°C VCE = 80 VCES, RG = 10 Ω, VGE = ±15 V TVJ = 125°C, non-repetitive Maximum Ratings 1200 ±20 35 25 75 45 10 -40...+150 -40...

Published: Mar 6, 2011 |