PPM3FD20V1E Overview
Description
The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) -20 MOSFET Product Summary RDS(on)(Ω) ID(mA) 0.45@ VGS=-4.5V 0.62@ VGS=-2.5V -800 0.86@ VGS=-1.8V PPM3FD20V1E P-Channel MOSFET Top View Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Maximum Power Dissipation (Note 1)(Note 4) Maximum Power Dissipation (Note 2)(Note 4) Pulsed Drain Current(Note 3) Operating Junction Temperature Lead Temperature Storage Temperature Range Continuous Pulsed TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID IDP PD PD IDM TJ TL Tstg Value -20 ±10 -800 -1200 270 170 240 150 -1.2 150 260 -55 to +150 Units V V mA mW mW A ℃ ℃ ℃ Parameter Junction-to-Ambient Junction-to-Ambient Junction-to-Case t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State Symbol RθJA RθJA RθJA Min.
