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PPMT2301 - P-Channel MOSFET

General Description

Trench Power LV MOSFET technology High Power and Current handing capability Low Gate Charge MOSFET Product Summary VDS(V) -20 RDS(on)(mΩ) 90@VGS = -4.5V 135@VGS = -2.5V ID(A) -4.0 Applications PWM applications Load switch Power management PPMT2301 P-Channel

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Datasheet Details

Part number PPMT2301
Manufacturer Prisemi
File Size 1.13 MB
Description P-Channel MOSFET
Datasheet download datasheet PPMT2301 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description  Trench Power LV MOSFET technology  High Power and Current handing capability  Low Gate Charge MOSFET Product Summary VDS(V) -20 RDS(on)(mΩ) 90@VGS = -4.5V 135@VGS = -2.5V ID(A) -4.0 Applications  PWM applications  Load switch  Power management PPMT2301 P-Channel MOSFET Top View Circuit Diagram 2301 Absolute maximum rating@25℃ Rating Drain-source Voltage Gate-source Voltage Drain Current Pulsed Drain Current1) TA=25℃ @ Steady State TA=70℃ @ Steady State Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient @ Steady State2) Junction and Storage Temperature Range Notes： 1) Pulse Test: Pulse Width≤300μs,Duty cycle ≤2%. 2) Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Rev.