PPMT2307 Overview
Description
Trench Power LV MOSFET technology - High density cell design for Low RDS(ON) - High Speed switching MOSFET Product Summary VDS(V) -30 RDS(on)(mΩ) 70@VGS = -10V 100@VGS = -4.5V ID(A) -3.0.
| Part | PPMT2307 |
|---|---|
| Description | P-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Prisemi |
| Size | 1.13 MB |
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