Datasheet Details
| Part number | PPMT2307 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 1.13 MB |
| Description | P-Channel MOSFET |
| Datasheet | PPMT2307-Prisemi.pdf |
|
|
Overview: Description Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Speed switching MOSFET Product Summary VDS(V) -30 RDS(on)(mΩ) 70@VGS = -10V 100@VGS = -4.5V ID(A) -3.
| Part number | PPMT2307 |
|---|---|
| Manufacturer | Prisemi |
| File Size | 1.13 MB |
| Description | P-Channel MOSFET |
| Datasheet | PPMT2307-Prisemi.pdf |
|
|
|
Trench Power LV MOSFET technology High density cell design for Low RDS(ON) High Speed switching MOSFET Product Summary VDS(V) -30 RDS(on)(mΩ) 70@VGS = -10V 100@VGS = -4.5V ID(A) -3.0 Applications Battery protection Load switch Power management PPMT2307 P-Channel MOSFET Top View Circuit Diagram 2307 Absolute maximum rating@25℃ Rating Drain-source Voltage Gate-source Voltage Drain Current @ TA = 25℃ Pulsed Drain Current1) Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient @ Steady State2) Junction and Storage Temperature Range Notes： 1) Pulse Test: Pulse Width≤300μs,Duty cycle ≤2%.
2) Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
Rev.06 1 Marking (Top View) Symbol VDS VGS ID IDM PD RθJA TJ,TSTG Value -30 ±20 -3.0 -15 1.2 105 -55~+150 Units V V A A W ℃/W ℃ www.prisemi.com P-Channel MOSFET PPMT2307 Electrical characteristics per line@25℃ (unless otherwise specified) Parameter Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage Maximum Body-Diode Continuous Current Dynamic Parameters Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Parameters Total Gate Charge Gate Source Charge Gate Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VSD IS Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tr Conditions VGS = 0V, ID = -250μA VDS = -30V,VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = -250μA VGS = -10V, ID = -3.0A VGS = -4.5V, ID = -2.0A IS = -3.0A,VGS = 0V VDS = -15V,VGS = 0V, f = 1MHz VGS = -10V,VDS = -15V, ID = -3.0A VGS = -10V,VDD = -15V, RL = 15Ω,ID = -1.0A, RGEN = 2.5Ω Min.
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