PPMT2301 Overview
Description
Trench Power LV MOSFET technology - High Power and Current handing capability - Low Gate Charge MOSFET Product Summary VDS(V) -20 RDS(on)(mΩ) 90@VGS = -4.5V 135@VGS = -2.5V ID(A) -4.0.
| Part | PPMT2301 |
|---|---|
| Description | P-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Prisemi |
| Size | 1.13 MB |
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