P4C1023 Datasheet | Pyramid Semiconductor

FEATURES VCC Current - Operating: 35m A - CMOS Standby: 100µA Access Times - 55/70 ns Single 5 Volts ±10% Power Supply .. Easy Memory Expansion Using CE and OE Inputs mon Data I/O Three-State Outputs Fully TTL patible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages - 32-Pin 400 or 600 mil Ceramic DIP - 32-Pin Ceramic SOJ DESCRIPTION The P4C1023L is a 1 Megabit low power CMOS static RAM organized as 128K x 8. The CMOS memory requires no clocks or refreshing, and has equal access and cycle times. Inputs are fully TTL-patible. The RAM operates from a single 5V±10% tolerance power supply. Access times of 55 ns and 70 ns are availale. CMOS is utilized to reduce power consumption to a low level. The P4C1023L device provides asynchronous operation with matching access and cycle times. Memory locations are specified on address pins A0 to A16. Reading is acplished by device selection (CE low) and output enabling (OE) while write enable (WE) remains HIGH. By presenting the address under these conditions, the data in the addressed memory location is presented on the data input/output pins. The input/output pins stay in the HIGH Z state when either CE is HIGH or WE is LOW. The P4C1023L is packaged in a 32-pin 400 or 600 mil ceramic DIP and in a 32-pin ceramic SOJ. FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATION DIP (C10, C11), CERAMIC SOJ (CJ1) TOP VIEW Document # SRAM126 REV OR Revised October 2005 1 P4C1023/P4C1023L REMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE Temperature Range (Ambient) mercial (0°C to 70°C) Industrial (-40°C to 85°C) Military (-55°C to 125°C) Supply Voltage 4.5V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V 4.5V ≤ VCC ≤ 5.5V MAXIMUM RATINGS Stresses greater than those listed can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this data sheet. Exposure to Maximum Ratings for...