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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL65L6S-A/B/C Tentative Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
QL65L6S-A/B/C
InGaAlP Laser Diode
Tentative
Quantum Semiconductor International Co., Ltd.
Ver. 1 Aug. 2006
♦OVERVIEW
QL65L6S-A/B/C is a MOCVD grown 660nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of CW 80mW and pulse 160mW - for optical storage devices such as High Power Laser Modules.