Click to expand full text
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL68I6S-A/B/C Signature of Approval
Approved by Checked by Issued by
Approval by Customer
WWW.QSILaser.com
QL68I6S-A/B/C
InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd
2004. Rev 1.
♦ OVERVIEW
QL68I6S-A/B/C is a MOCVD grown 0.68 m band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 30mW for opto-electronic devices such as Industrials.
♦ APPLICATION
Industrials Laser Module
♦ FEATURES
Visible Light Output : λp = 685nm
Optical Power Output : 30 mW CW
Package Type
: TO-18 (5.6mmφ)
Built-in Photo Diode for Monitoring Laser Output
♦ ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathod, PD anode (Fig.
QL68I6S-B Datasheet
