Datasheet Details
| Part number | QL68I6S-C |
|---|---|
| Manufacturer | QSI |
| File Size | 164.51 KB |
| Description | LASER DIODE |
| Datasheet | QL68I6S-C QL68I6S-A Datasheet (PDF) |
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Overview: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL68I6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer .QSILaser. QL68I6S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd 2004. Rev 1. ♦ OVERVIEW QL68I6S-A/B/C is a MOCVD grown 0.68 m band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 30mW for opto-electronic devices such as Industrials.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | QL68I6S-C |
|---|---|
| Manufacturer | QSI |
| File Size | 164.51 KB |
| Description | LASER DIODE |
| Datasheet | QL68I6S-C QL68I6S-A Datasheet (PDF) |
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| Part Number | Description |
|---|---|
| QL68I6S-A | LASER DIODE |
| QL68I6S-B | LASER DIODE |
| QL68J6S-A | LASER DIODE |
| QL68J6S-B | LASER DIODE |
| QL68J6S-C | LASER DIODE |
| QL63D4S-A | LASER DIODE |
| QL63D4S-B | LASER DIODE |
| QL63D4S-C | LASER DIODE |
| QL63D5S-A | LASER DIODE |
| QL63D5S-B | LASER DIODE |