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QL68J6S-B Datasheet Preview

QL68J6S-B Datasheet

LASER DIODE

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QL68J6S-B pdf
QSI LASER DIODE
SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL68J6S-A/B/C
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QSI
QSI

QL68J6S-B Datasheet Preview

QL68J6S-B Datasheet

LASER DIODE

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QL68J6S-B pdf
QL68J6S-A/B/C
InGaAlP Laser Diode
Quantum Semiconductor International Co., Ltd
2007-11-22
OVERVIEW
QL68J6S-A/B/C is a MOCVD grown 0.68 m band InGaAlP laser diode with quantum well
structure. It's an attractive light source, with a typical light output power of 50mW for opto-electronic
devices such as Industrials.
APPLICATION
Industrials
Laser Module
FEATURES
Visible Light Output : λp = 685nm
Optical Power Output : 50 mW CW
Package Type
: TO-18 (5.6mmφ)
Built-in Photo Diode for Monitoring Laser Output
ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathod, PD anode (Fig. 1)
B LD , PD anode (Fig. 2)
C LD anode, PD cathod (Fig. 3)
Fig. 1
QL68J6SA
Fig. 2
QL68J6SB
Fig. 3
QL68J6SC


Part Number QL68J6S-B
Description LASER DIODE
Maker QSI
Total Page 5 Pages
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