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QL83I6S-A - LASER DIODE

Features

  • - Visible Light Output : λp = 830 nm - Optical Power Output : 30mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode.

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Datasheet Details

Part number QL83I6S-A
Manufacturer QSI
File Size 149.56 KB
Description LASER DIODE
Datasheet download datasheet QL83I6S-A Datasheet

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Full PDF Text Transcription

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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL83I6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer TENTATIVE 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL83I6S-A/B/C AlGaAs Laser Diode Quantum Semiconductor International Co., Ltd. Ver.1 Mar. 2010 ♦OVERVIEW QL83I6S-A/B/C is a MOCVD grown 830nm band AlGaAs laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 30mW for industrial optical module and sensor applications. ♦APPLICATION - Sensor - Industrial Optical Module ♦FEATURES - Visible Light Output : λp = 830 nm - Optical Power Output : 30mW CW - Package Type : TO-18 (5.
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