TQP3M9036 Description
TQP3M9036 ® Ultra-Low Noise, High Linearity LNA Ratings Parameter Rating Storage Temperature −65 to 150 °C RF Input Power, CW, 50 Ω, T=+25 °C +22 dBm Device Voltage (VDD) +7 V Operation of this device outside the parameter ranges given above may cause permanent damage. Remended Operating Conditions Parameter Min Typ Max Units Device Voltage (VCC) +3.3 +5.0 +5.25 V TCASE −40 Tj for >106 hours MTTF +105 °C +190 °C...
TQP3M9036 Key Features
- 50-2000 MHz Operational Bandwidth
- Ultra-low noise figure, 0.45 dB NF at 900 MHz
- High gain, 19.8 dB Gain at 900 MHz
- High linearity, +36 dBm Output IP3
- High input power ruggedness, >22 dBm PIN, MAX
- Unconditionally stable
- Integrated on-chip matching, 50 ohm in/out
- Integrated active bias
- Integrated shutdown control pin
- 3-5 V positive supply voltage: -Vgg not required