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2N3263 - Power Transistors

Features

  • Low saturation voltages - 2N3263 and 2N3265 VCE(sad = 0.75 V (max. ) at IC = 15 A VBE(sat) = 1.60 V (max. ) at IC = 15 A 2N3264 and 2N3266 = =vCE (sad 1.20 V (max. ) at Ic 15 A VBE (sat) = 1_80 V (max. ) at IC = 15 A.
  • High reliability and uniformity of characteristics.
  • High power dissipation.
  • Fast rise time at high collector current - 0.2/1s at 10 A (typical) RCA-2N3263, 2N3264, 2N3265, and 2N3266a are n-p-n epitaxial silicon power transistors designed for high.

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Datasheet Details

Part number 2N3263
Manufacturer RCA
File Size 365.65 KB
Description Power Transistors
Datasheet download datasheet 2N3263 Datasheet

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Full PDF Text Transcription

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File No. 54 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ oornLJiJ Power Transistors Solid State Division 2N3263 2N3264 2N3265 2N3266 ~ H-1354 ~3263.2N3264 IRADIAL) .11 y . . .H-1785 J 2N3265:2N3266 IJEDEC TO-631 High-Power,High-Speed, High-Current Silicon N-P-N Power Transistors Epitaxial Types for Aerospace, Military, and Industrial Applications Features: • Low saturation voltages - 2N3263 and 2N3265 VCE(sad = 0.75 V (max.) at IC = 15 A VBE(sat) = 1.60 V (max.) at IC = 15 A 2N3264 and 2N3266 = =vCE (sad 1.20 V (max.) at Ic 15 A VBE (sat) = 1_80 V (max.) at IC = 15 A • High reliability and uniformity of characteristics • High power dissipation • Fast rise time at high collector current - 0.
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