CMPSH-3
Key Features
- Power dissipation PD: 350 mW (Tamb=25OC)
- Forward current IF: 100 mA
- Reverse voltage VR: 30 V
- Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| CMPSH-3 | LGE | Schottky Barrier Diode |
| CMPSH-3S | Central Semiconductor | SCHOTTKY DIODES |
| CMPSH-3A | Central Semiconductor | SCHOTTKY DIODES |
| CMPSH-3C | SeCoS Halbleitertechnologie GmbH | Surface Mount Schottky Barrier Rectifiers Array |
| CMPSH-3 | Micro Commercial Components | Switching Diode |
| CMPSH-3A | Micro Commercial Components | Switching Diode |
| CMPSH-3S | LGE | Schottky Barrier Diode |
| CMPSH-3 | JCST | SCHOTTKY BARRIER DIODE |
| CMPSH-3S | SeCoS Halbleitertechnologie GmbH | Surface Mount Schottky Barrier Rectifiers Array |
| CMPSH-3A | SeCoS Halbleitertechnologie GmbH | Surface Mount Schottky Barrier Rectifiers Array |