Datasheet4U Logo Datasheet4U.com

RTH23007-10 Datasheet GaN Doherty Hybrid Amplifier

Manufacturer: RFHIC

📥 Download Datasheet

Datasheet Details

Part number RTH23007-10
Manufacturer RFHIC
File Size 285.60 KB
Description GaN Doherty Hybrid Amplifier
Datasheet download datasheet RTH23007-10 Datasheet

General Description

Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process.

This high performance amplifier achieves high efficiency of 45%, and powers 7W over the frequency range from 2300MHz to 2400MHz.

Integrated with Asymmetrical Doherty configurations, RTH Series is packaged in a very small form-factor 28 x 19 x 4.8mm on AIN (aluminum nitride) board which provides excellent thermal dissipation.

Overview

GaN Doherty Hybrid Amplifier RTH23007-10 Product.

Key Features

  • GaN on SiC Chip on Board.
  • Surface Mount Hybrid Type.
  • Asymmetric Doherty Amplifier.
  • High Efficiency.
  • No Matching circuit needed.

More Datasheets from RFHIC

Part Number Description
RTH35003-20D GaN Doherty Hybrid Amplifier