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RFHIC

RTH23007-10 Datasheet Preview

RTH23007-10 Datasheet

GaN Doherty Hybrid Amplifier

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GaN Doherty Hybrid Amplifier RTH23007-10
Product Features
• GaN on SiC Chip on Board
• Surface Mount Hybrid Type
• Asymmetric Doherty Amplifier
• High Efficiency
• No Matching circuit needed
Applications
• RF Sub-Systems
• Base Station
• RRH
• 4G/ LTE system
• Small cell
Package Type : NP-8CL
Description
Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high
power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45%, and
powers 7W over the frequency range from 2300MHz to 2400MHz. Integrated with Asymmetrical Doherty configurations, RTH Series
is packaged in a very small form-factor 28 x 19 x 4.8mm on AIN (aluminum nitride) board which provides excellent thermal
dissipation.
Electrical Specifications @ Vds =31V, Ta=25
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
2300
-
2400
Power Gain
12 14
-
Gain Flatness
dB -3.0
-
3.0
Input Return Loss
- -9 -6
Pout @ Average dBm - 38.5 -
Pout @ Psat
dBm 46
47
-
ACLR @ BW 10MHz
LTE (PAPR 7.5dB)
dBc
-
-
-27 -24
-53 -
Drain Efficiency % 40
45
-
Carrier Idq
- 120 -
mA
Total Ids
- 500 -
- -3.5 -2.0
Supply Voltage V -
-5.0 -4.0
30.5 31 31.5
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate voltage supply and last turn on the Drain voltage supplies
Turn off : Turn off the Drain voltage and last turn off the Gate voltage
Note
1. ACLR Measured Pout=38.5dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180)
2. RTH Series have internal DC blocking capacitors at the RF input and output ports
CONDITION
ZS = ZL = 50 ohm
Carrier Idq = 150mA
Vgp = -4.8V
Pulse Width=20us, Duty10%
Non DPD
With DPD
Vgc
Vgp
Vds
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
TYP
5
28 x 19 x 4.8
REMARK
-
-
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
1/7
All specifications may change without notice
Version 1.1




RFHIC

RTH23007-10 Datasheet Preview

RTH23007-10 Datasheet

GaN Doherty Hybrid Amplifier

No Preview Available !

GaN Doherty Hybrid Amplifier
Absolute Maximum Ratings
PARAMETER
Gate-Source Voltage
Drain-Source Voltage
Gate Current
Operating Junction Temperature
Operating Case Temperature
Storage Temperature
UNIT
V
V
mA
°C
°C
°C
RTH23007-10
RATING
-10 ~ 0
50
4.0
225
-30 ~ 85
-40 ~ 100
SYMBOL
Vgc
Vgp
Vds
Igs
TJ
TC
TSTG
Operating Voltage & Input Level
PARAMETER
UNIT
MIN
TYP
Drain Voltage
V 30.5
31
Gate Voltage (on-stage)
V
- Vgc @Carrier Idq
Gate Voltage (on-stage)
V
-
Vgp
Gate Voltage (off-stage)
V
-
-8
Gate Voltage (off-stage)
V
-
-8
RF Input Level
dB -
-
*Vgp(Peaking gate voltage) set: Lower Vgp of Δ-1.9V at Peaking Idq 10mA
MAX
31.5
-2
-2
-
-
35
SYMBOL
Vds
Vgc
Vgp
Vgc
Vgp
Pin
Block Diagram
*Note
Directional coupler, isolator and drive amplifier MUST be located CLOSE to the DUT(device under test) is needed for best performance.
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
2/7
All specifications may change without notice
Version 1.1


Part Number RTH23007-10
Description GaN Doherty Hybrid Amplifier
Maker RFHIC
Total Page 7 Pages
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