SGA1263Z Description
RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT 50GHz FT process, featuring one-micron emitters with VCEO>7V. These unconditionally stable amplifiers have less...
SGA1263Z Key Features
- DCto4000MHz Operation
- Single Supply Voltage
- Excellent Isolation, >50dB at
- 50 In/Out, Broadband
- Unconditionally Stable