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RF Micro Devices
RF Micro Devices

RF2310 Datasheet Preview

RF2310 Datasheet

WIDEBAND GENERAL PURPOSE AMPLIFIER

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RF2310 pdf
RF2310
4 WIDEBAND GENERAL PURPOSE AMPLIFIER
Typical Applications
• General Purpose High Bandwidth Gain
Blocks
• IF or RF Buffer Amplifiers
• Broadband Test Equipment
• Final PA for Medium Power Applications
• Driver Stage for Power Amplifiers
Product Description
The RF2310 is a general purpose, low-cost, high linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
an easily cascadable 50gain block. Applications
include IF and RF amplification in wireless voice and data
communication products operating in frequency bands up
to 2500MHz. The gain flatness over a very wide band-
width makes the device suitable for many applications.
The device is self-contained with 50input and output
impedances and requires only two external DC biasing
elements to operate as specified.
0.196
0.189
8° MAX
0° MIN
0.157
0.150
0.244
0.229
0.034
0.016
0.018
0.014
0.008
0.004
-A-
0.050
Dimensions in mm
0.068
0.053
0.009
0.007
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
mold flash.
3. Lead coplanarity -
0.005 with respect to datum "A".
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
VCC 1
GND 2
GND 3
RF IN 4
8 RF OUT
7 GND
6 GND
5 GND
Package Style: SOIC-8
Features
• DC to well over 2500MHz Operation
• Internally Matched Input and Output
• 15dB Small Signal Gain
• 5dB Noise Figure
• +19dBm Output Power
• Single 3.5V to 6V Positive Power Supply
Ordering Information
RF2310
Wideband General Purpose Amplifier
RF2310 PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4
Rev C5 010717
4-75



RF Micro Devices
RF Micro Devices

RF2310 Datasheet Preview

RF2310 Datasheet

WIDEBAND GENERAL PURPOSE AMPLIFIER

No Preview Available !

RF2310 pdf
RF2310
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +6.0
VDC
Input RF Power
+10 dBm
Storage Temperature
-40 to +150
°C
Junction Temperature
175 °C
Thermal Resistance, Junction to
Case
179
°C/W
Notes: case reference: pins 5-7, conditions: no signal in and both RF ports
terminated in 50; average junction temperature measured at 85°C
ambient: 143°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4
Specification
Parameter
Unit
Min.
Typ.
Max.
Condition
Operating Range
Overall Frequency Range
Supply Voltage
Operating Current (ICC)
Operating Ambient Temperature
3.6V Performance
100
3.5
40
-40
2500
MHz
6.0 V
20 25 mA VCC=3.6V, Temp=27°C
50 65 mA VCC=5V, Temp=27°C
+85 °C
Gain
Gain
Noise Figure
Output IP3
OP1dB
Gain
Noise Figure
Output IP3
OP1dB
Gain
Noise Figure
Output IP3
OP1dB
5V Performance
16.2
15.3
2.5
+22.0
+10
15
2.7
+23.0
+10
16
2.4
+21.0
+10
dB
dB
dB
dBm
dBm
dB
dB
dBm
dBm
dB
dB
dBm
dBm
Freq=300MHz, VCC=3.6V, Temp=27°C
Freq=900MHz, VCC=3.6V, Temp=27°C
Freq=1950MHz, VCC=3.6V, Temp=27°C
Freq=2450MHz, VCC=3.6V, Temp=27°C
Gain
Gain
Noise Figure
Output IP3
OP1dB
Gain
Noise Figure
Output IP3
OP1dB
Gain
Noise Figure
Output IP3
OP1dB
14.0
+28.0
17
16.5
3
+31.0
+17
15.6
3.5
+33.0
+18
15
2.8
+26.0
+17
dB
dB
dB
dBm
dBm
dB
dB
dBm
dBm
dB
dB
dBm
dBm
Freq=300MHz, VCC=5V, Temp=27°C
Freq=900MHz, VCC=5V, Temp=27°C
Freq=1950MHz, VCC=5V, Temp=27°C
Freq=2450MHz, VCC=5V, Temp=27°C
4-76
Rev C5 010717


Part Number RF2310
Description WIDEBAND GENERAL PURPOSE AMPLIFIER
Maker RF Micro Devices
Total Page 9 Pages
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