RFHA1020 Datasheet 280W GaN WIDE-BAND PULSED POWER AMPLIFIER

Manufacturer: RF Micro Devices (now Qorvo)

RFHA1020 280w gan wide-band pulsed power amplifier by RF Micro Devices (now Qorvo) - Datasheet Preview

Datasheet Details

Part number	RFHA1020
Manufacturer	RF Micro Devices (now Qorvo)
File Size	744.84 KB
Description	280W GaN WIDE-BAND PULSED POWER AMPLIFIER
Download	RFHA1020 Download (PDF)

General Description

The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications.

Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency, and flat gain over a broad frequency range in a single package.

The RFHA1020 is a matched power transistor packaged in a hermetic, flanged ceramic package.

Overview

RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2.

Key Features

Wideband Operation: 1.2GHz to 1.4GHz.
Advanced GaN HEMT Technology.
Advanced Heat-Sink Technology.
Supports Multiple Pulse Conditions.
10% to 20% Duty Cycle.
100s to 1ms Pulse Width.
Integrated Matching Components for High Terminal Impedances.
50V Operation Typical Performance:.
Output Pulsed Power: 280W.
Pulse Width: 100s, Duty Cycle 10%.
Small Signal Gain: 15dB.
High Efficiency (55%).
- 40°C to 85°C Operating Temperature RF I.

More Datasheets from RF Micro Devices (now Qorvo)

Part Number	Description
RFHA1023	225W GaN WIDE-BAND PULSED POWER AMPLIFIER
RFHA1000	15W GaN WIDE-BAND POWER AMPLIFIER
RFHA1003	9W GaN WIDEBAND
RFHA1006	9W GaN WIDEBAND POWER AMPLIFIER