RFHA1020 Datasheet | RF Micro Devices

Key Features

• Wideband Operation: 1.2GHz to 1.4GHz
• Advanced GaN HEMT Technology
• Advanced Heat-Sink Technology
• Supports Multiple Pulse Conditions
• 10% to 20% Duty Cycle
• 100s to 1ms Pulse Width
• Integrated Matching Components for High Terminal Impedances
• 50V Operation Typical Performance:
• Output Pulsed Power: 280W
• Pulse Width: 100s, Duty Cycle 10%