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RFHA1023 Datasheet 225w Gan Wide-band Pulsed Power Amplifier

Manufacturer: RF Micro Devices (now Qorvo)

Overview: .DataSheet.co.kr RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2.

General Description

The RFHA1023 is a 36V 225W high power discrete amplifier designed for L-Band pulsed radar, Air Traffic Control and Surveillance and general purpose broadband amplifier applications.

Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package.

The RFHA1023 is a matched power transistor packaged in a hermetic, flanged ceramic package.

Key Features

  • Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50 : Operation Integrated Matching Components for High Terminal Impedances 36V Operation Typical Performance:.
  • RF IN VGQ Pin 1 (CUT) GND BASE RF OUT VDQ Pin 2 Functional Block Diagram Output Pulsed Power: 225W Pulse Width: 1ms, Duty Cycle 10% Smal.

More Datasheets from RF Micro Devices (now Qorvo)

Part Number Description
RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER
RFHA1000 15W GaN WIDE-BAND POWER AMPLIFIER
RFHA1003 9W GaN WIDEBAND
RFHA1006 9W GaN WIDEBAND POWER AMPLIFIER

RFHA1023 Distributor