RFHA1023 Datasheet | RF Micro Devices

.DataSheet.co.kr 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features - - - - - - Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50 : Operation Integrated Matching ponents for High Terminal Impedances 36V Operation Typical Performance: - - - - - RF IN VGQ Pin 1 (CUT) GND BASE RF OUT VDQ Pin 2 Functional Block Diagram Output Pulsed Power: 225W Pulse Width: 1ms, Duty Cycle 10% Small Signal Gain: 15dB High Efficiency (55%) - 40°C to 85°C Operating Temperature Product Description The RFHA1023 is a 36V 225W high power discrete amplifier designed for...