RFHA1020 Datasheet | RF Micro Devices

280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features - Wideband Operation: 1.2GHz to 1.4GHz - Advanced GaN HEMT Technology - Advanced Heat-Sink Technology - Supports Multiple Pulse Conditions - 10% to 20% Duty Cycle - 100s to 1ms Pulse Width - Integrated Matching ponents for High Terminal Impedances - 50V Operation Typical Performance: - Output Pulsed Power: 280W - Pulse Width: 100s, Duty Cycle 10% - Small Signal Gain: 15dB - High Efficiency (55%) - - 40°C to 85°C Operating Temperature RF IN VG Pin 1 (CUT) GND BASE RF OUT VD Pin 2 Functional Block Diagram Product Description The RFHA1020 is a 50V 280W high power discrete amplifier designed...