RFHA1023 Datasheet | RF Micro Devices

.DataSheet.co.kr RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features - - - - - - Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50 : Operation Integrated Matching ponents for High Terminal Impedances 36V Operation Typical Performance: - - - - - RF IN VGQ Pin 1 (CUT) GND BASE RF OUT VDQ Pin 2 Functional Block Diagram Output Pulsed Power: 225W Pulse Width: 1ms, Duty Cycle 10% Small Signal Gain: 15dB High Efficiency (55%) - 40°C to 85°C Operating Temperature Product Description The RFHA1023 is a 36V 225W high power discrete amplifier designed for L-Band pulsed radar, Air Traffic Control and Surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. The RFHA1023 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is acplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier. Applications - - - Radar Air Traffic Control and Surveillance General Purpose Broadband Amplifiers Ordering Information RFHA1023 225W GaN Wide-Band Pulsed RFHA1023PCBA-410 Fully Assembled Evaluation Board Optimized for 1.2GHz to 1.4GHz; 36V Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT 9GaN...