Part RFHA1023
Description 225W GaN WIDE-BAND PULSED POWER AMPLIFIER
Manufacturer RF Micro Devices
Size 347.67 KB
RF Micro Devices
RFHA1023

Overview

  • Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50 : Operation Integrated Matching Components for High Terminal Impedances 36V Operation Typical Performance: * * * *
  • RF IN VGQ Pin 1 (CUT) GND BASE