RFHA1023
Features
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Wideband Operation: 1.2GHz to 1.4GHz Advanced Ga N HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50 : Operation Integrated Matching ponents for High Terminal Impedances 36V Operation Typical Performance:
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- RF IN VGQ Pin 1 (CUT) GND BASE
RF OUT VDQ Pin 2
Functional Block Diagram
Output Pulsed Power: 225W Pulse Width: 1ms, Duty Cycle 10% Small Signal Gain: 15d B High Efficiency (55%)
- 40°C to 85°C Operating Temperature
Product Description
The RFHA1023 is a 36V 225W high power discrete amplifier designed for L-Band pulsed radar, Air Traffic Control and Surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (Ga N) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. The RFHA1023 is a matched power transistor packaged in a hermetic, flanged...
