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RF Micro Devices

RFHA1023 Datasheet Preview

RFHA1023 Datasheet

225W GaN WIDE-BAND PULSED POWER AMPLIFIER

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www.DataSheet.co.kr
RFHA1023
225W GaN WIDE-BAND PULSED
POWER AMPLIFIER
Package: Flanged Ceramic, 2 Pin
Features
„ Wideband Operation: 1.2GHz
to 1.4GHz
„ Advanced GaN HEMT
Technology
„ Advanced Heat Sink
Technology
„ Optimized Evaluation Board
Layout for 50: Operation
„ Integrated Matching
Components for High
Terminal Impedances
„ 36V Operation Typical
Performance:
„ Output Pulsed Power: 225W
„ Pulse Width: 1ms, Duty Cycle
10 %
„ Small Signal Gain: 15dB
„ High Efficiency (55%)
„ - 40°C to 85°C Operating
Temperature
Applications
„ Radar
„ Air Traffic Control and
Surveillance
„ General Purpose Broadband
Amplifiers
RF IN
VGQ
Pin 1 (CUT)
GND
BASE
RF OUT
VDQ
Pin 2
Functional Block Diagram
Product Description
The RFHA1023 is a 36V 225W high power discrete amplifier designed for L-Band
pulsed radar, Air Traffic Control and Surveillance and general purpose broadband
amplifier applications. Using an advanced high power density Gallium Nitride (GaN)
semiconductor process, these high performance amplifiers achieve high output
power, high efficiency and flat gain over a broad frequency range in a single pack-
age. The RFHA1023 is a matched power transistor packaged in a hermetic, flanged
ceramic package. The package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of single, optimized matching networks
that provide wideband gain and power performance in a single amplifier.
Ordering Information
RFHA1023
225W GaN Wide-Band Pulsed
RFHA1023PCBA-410 Fully Assembled Evaluation Board Optimized for 1.2GHz to
1.4GHz; 36V
DS110630
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
9GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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RF Micro Devices

RFHA1023 Datasheet Preview

RFHA1023 Datasheet

225W GaN WIDE-BAND PULSED POWER AMPLIFIER

No Preview Available !

www.DataSheet.co.kr
RFHA1023
Absolute Maximum Ratings
Parameter
Drain Voltage (VD)
Gate Voltage (VG)
Gate Current (IG)
Operational Voltage
Ruggedness (VSWR)
Storage Temperature Range
Operating Temperature Range (TC)
Operating Junction Temperature (TJ)
Human Body Model
Rating
150
-8 to +2
155
40
10:1
-55 to +125
-40 to +85
200
Class 1A
Unit
V
V
mA
V
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
MTTF (TJ< 200 °C, 95% Confidence
Limits)*
3E + 06
Hours
Thermal Resistance, RTH (junction
to case):
TC=85 °C, DC bias only
TC=85 °C, 100s pulse, 10%
duty cycle
0.90
0.30
°C/W
°C/W
* MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values.
Bias Conditions should also satisfy the following expression: PDISS<(TJ-TC)/RTH J-C and TC=TCASE
Parameter
Min.
Recommended Operating Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
Drain Bias Current
-8
Frequency of Operation
1200
DC Functional Test
IG (OFF) – Gate Leakage
ID (OFF) – Drain Leakage
VGS (TH) – Threshold Voltage
VDS (ON) – Drain Voltage at High
Current
RF Functional Test
Small Signal Gain
Power Gain
11.8
Input Return Loss
Output Power
53
Drain Efficiency
48
Specification
Typ.
-3
440
- 3.4
0.22
14
53.25
50
Max.
36
-2
1400
2
2
-6
Unit Condition
V
V
mA
MHz
mA
mA
V
V
dB
dB
dB
dBm
%
VG=-8V, VD=0V
VG=-8V, VD=50V
VD=36V, ID=20mA
VG=0V, ID=1.5A
[1], [2]
f=1200MHz, PIN=30dBm
f=1200MHz, PIN=41.2dBm
f=1200MHz, PIN=30dBm
f=1200MHz, PIN=41.2dBm
f=1200MHz, PIN=41.2dBm
2 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110630
Datasheet pdf - http://www.DataSheet4U.net/


Part Number RFHA1023
Description 225W GaN WIDE-BAND PULSED POWER AMPLIFIER
Maker RF Micro Devices
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RFHA1023 Datasheet PDF






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