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SGL0163Z - high performance SiGe HBT MMIC amplifier

Description

The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier featuring one-micron emitters with FT up to 50GHz.

This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5V.

Features

  • Internally Matched to 50 800MHz to 1300MHz.
  • High Input/Output Intercept.
  • Low Noise Figure: 1.2dB Typ. at 900MHz.
  • Low Power Consumption.
  • Single Voltage Supply Opera- tion.
  • Internal Temperature Com- pensation.

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Datasheet Details

Part number SGL0163Z
Manufacturer RF Micro Devices
File Size 411.58 KB
Description high performance SiGe HBT MMIC amplifier
Datasheet download datasheet SGL0163Z Datasheet
Additional preview pages of the SGL0163Z datasheet.

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Full PDF Text Transcription

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SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier SGL0163Z 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier featuring one-micron emitters with FT up to 50GHz. This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5V. The SGL0163Z has been characterized at VD=3V for low power and 4V for medium power applications. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation from 800MHz to 1300MHz.
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