SGL0163Z Datasheet - RF Micro Devices

high performance SiGe HBT MMIC amplifier

SGL0163Z Features

* Internally Matched to 50 800MHz to 1300MHz

* High Input/Output Intercept

* Low Noise Figure: 1.2dB Typ. at 900MHz

* Low Power Consumption

* Single Voltage Supply Opera- tion

* Internal Temperature Com- pensation Applications

* Receivers, GPS, RFID

* Cellular, Fixed

SGL0163Z General Description

The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier featuring one-micron emitters with FT up to 50GHz. This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5V. The SGL0163Z has been characterized at VD=3V for low.

SGL0163Z Datasheet (411.58 KB)

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Datasheet Details

Part number:

SGL0163Z

Manufacturer:

RF Micro Devices

File Size:

411.58 KB

Description:

High performance sige hbt mmic amplifier.
SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier SGL0163Z 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLI.

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SGL0163Z high performance SiGe HBT MMIC amplifier RF Micro Devices

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SGL0163Z Features

SGL0163Z General Description

Datasheet Details

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