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SGL0263Z Datasheet - RF Micro Devices

high performance SiGe HBT MMIC amplifier

SGL0263Z Features

* High Input/Output Intercept

* Low Noise Figure: 1.3dB typ. at 1900MHz

* Low Power Consumption

* Single Voltage Supply Opera- tion

* Internal Temperature Com- pensation Applications

* Receivers, GPS, RFID

* Cellular, Fixed Wireless, Land Mobile Parameter Specification

SGL0263Z General Description

The SGL0263Z is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50GHz. This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5V. The SGL0263Z has been characterized at VD=3V for low p.

SGL0263Z Datasheet (330.96 KB)

Preview of SGL0263Z PDF

Datasheet Details

Part number:

SGL0263Z

Manufacturer:

RF Micro Devices

File Size:

330.96 KB

Description:

High performance sige hbt mmic amplifier.
SGL0263Z 1400MHz to 2500MHz Silicon Germanium Cascadable Low Noise Amplifier SGL0263Z 1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMP.

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SGL0263Z high performance SiGe HBT MMIC amplifier RF Micro Devices

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