SGL0263Z - high performance SiGe HBT MMIC amplifier

RF Micro Devices

General Description

The SGL0263Z is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50GHz.

This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5V.

Key Features

High Input/Output Intercept.
Low Noise Figure: 1.3dB typ. at 1900MHz.
Low Power Consumption.
Single Voltage Supply Opera- tion.
Internal Temperature Com- pensation.

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SGL0263Z high performance sige hbt mmic amplifier by RF Micro Devices - Datasheet Preview

Datasheet Details

Part number	SGL0263Z
Manufacturer	RF Micro Devices
File Size	330.96 KB
Description	high performance SiGe HBT MMIC amplifier
Datasheet	SGL0263Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGL0263Z 1400MHz to 2500MHz Silicon Germanium Cascadable Low Noise Amplifier SGL0263Z 1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description The SGL0263Z is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50GHz. This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5V. The SGL0263Z has been characterized at VD=3V for low power and 4V for medium power applications. Only two DCblocking capacitors, 2 input matching components, a bias resistor, and an optional RF choke are required for operation from 1400MHz to 2500MHz.