RF Micro Devices SGL0163Z
The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier featuring one-micron emitters with FT up to 50GHz. This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5V. The SGL0163Z has been characterized at VD=3V for low power and 4V for medium power applications.| Part No. | SGL0163Z |
|---|---|
| Datasheet | SGL0163Z Download |
| Manufacturer |  RF Micro Devices |
| Description | high performance SiGe HBT MMIC amplifier |
| Buy | Stock & Price |
DESCRIPTION
Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation from 800MHz to 1300MHz. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT Temperature Compensation Circuit RF In VS RF Out / VSFEATURES
● Internally Matched to 50 800MHz to 1300MHz● High Input/Output Intercept
● Low Noise Figure: 1.2dB Typ. at 900MHz
● Low Power Consumption
● Single Voltage Supply Opera- tion
● Internal Temperature Com- pensation
APPLICATIONS
● Receivers, GPS, RFID● Cellular, Fixed Wireless, Land Mobile Parameter Specification (VS=3V) Min. Typ. Max. Specification (VS=4V) Min. Typ. Max. Small Signal Gain 15.7 16.6 14.0 15.5 17.0 15.8 14.1 15.0 Output Power at 1dB Compression 4.4 9.9 3.2 5.2 10.1 5.6 10.5 Input Third Order Intercept Point 5.3 12.1 5.0 7.0 13.4 9.0 14.8 Noise Figure 1.1 1.6 1.2 1.7 1.7 1.2 1.7 Input Return Loss 10.0 12.5 15.7 Output Return Loss 11...
