• Part: SGL0163Z
  • Description: high performance SiGe HBT MMIC amplifier
  • Manufacturer: RF Micro Devices
  • Size: 411.58 KB
Download SGL0163Z Datasheet PDF
RF Micro Devices
SGL0163Z
SGL0163Z is high performance SiGe HBT MMIC amplifier manufactured by RF Micro Devices.
SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier featuring one-micron emitters with FT up to 50GHz. This device has an internal temperature pensation circuit permitting operation directly from supply voltages as low as 2.5V. The SGL0163Z has been characterized at VD=3V for low power and 4V for medium power applications. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation from 800MHz to 1300MHz. Optimum Technology Matching®...