SPA2118Z Datasheet - RF Micro Devices

POWER AMPLIFIER

SPA2118Z Features

* High Linearity Performance

* +20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP

* +47dBm Typ. OIP3

* High Gain: 33dB Typ.

* On-Chip Active Bias Control

* Patented high Reliability GaAs HBT Technology

* Surface-Mountable Plastic Package Applications

* IS-95 CDMA System

SPA2118Z General Description

RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wa.

SPA2118Z Datasheet (324.89 KB)

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Datasheet Details

Part number:

SPA2118Z

Manufacturer:

RF Micro Devices

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324.89 KB

Description:

Power amplifier.
SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias SPA2118Z 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Produc.

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SPA2118Z POWER AMPLIFIER RF Micro Devices

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SPA2118Z Features

SPA2118Z General Description

Datasheet Details

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