SPA2118Z Overview
RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in...
SPA2118Z Key Features
- High Linearity Performance
- +20.7dBm, IS-95 CDMA
- +47dBm Typ. OIP3
- High Gain: 33dB Typ
- On-Chip Active Bias Control
- Patented high Reliability GaAs HBT Technology
- Surface-Mountable Plastic Package