SPA2118Z - POWER AMPLIFIER

Description

RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.

Features

High Linearity Performance.
+20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP.
+47dBm Typ. OIP3.
High Gain: 33dB Typ.
On-Chip Active Bias Control.
Patented high Reliability GaAs HBT Technology.
Surface-Mountable Plastic Package.

RF Micro Devices

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Datasheet Details

Part number	SPA2118Z
Manufacturer	RF Micro Devices
File Size	324.89 KB
Description	POWER AMPLIFIER
Datasheet	SPA2118Z Datasheet
Additional preview pages of the SPA2118Z datasheet.

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Full PDF Text Transcription

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SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias SPA2118Z 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band. Its high linearity makes it an ideal choice for multi-carrier and digital applications.

Published: Apr 1, 2016 |