2SAR514P FRA
Datasheet
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
PD*2
PD*3
Tj
Tstg
Values
-80
-80
-6
-0.7
-1.4
0.5
2.0
150
-55 to +150
Unit
V
V
V
A
A
W
W
℃
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
Symbol
Conditions
BVCBO IC = -100μA
BVCEO IC = -1mA
BVEBO IE = -100μA
ICBO VCB = -80V
IEBO VEB = -4V
VCE(sat) IC = -300mA, IB = -15mA
hFE VCE = -3V, IC = -100mA
fT
VCE = -10V, IE = 200mA,
f = 100MHz
Cob
VCB = -10V, IE = 0A,
f = 1MHz
Min.
-80
-80
-6
-
-
-
120
-
-
Values
Typ.
-
-
-
-
-
-200
-
380
10
Max.
-
-
-
-1.0
-1.0
-400
390
-
-
Unit
V
V
V
μA
μA
mV
-
MHz
pF
Turn-On time
Storage time
Fall time
ton IC = -350mA,
IB1 = -35mA,
tstg
IB2 = 35mA,
VCC ⋍ -10V,
tf
RL = 27Ω
See test circuit
- 50 -
- 350 -
- 50 -
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board.(40×40×0.7mm)
ns
ns
ns
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20160920 - Rev.001
