BU4S11G2 Description
The BU4S11G2 is a 2-input NAND gate. An inverter-based buffer is incorporated at the gate output to improve I/O transmission characteristics, and it minimizes a variation in the propagation delay time caused by an increase in the load capacitance. Key Specifications Supply Voltage Range:.
BU4S11G2 Key Features
- Low power consumption
- High noise immunity
- Wide operating supply voltage range
- High input impedance
- High fan out
- Input can be directly driven 2 L-TTL inputs or 1 LS-TTL
- Buffered output